Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside
Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2021-04-01
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| Serie: | Micromachines |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2072-666X/12/4/407 |
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