New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

The drive inverter represents a central component of an electric vehicle (EV) drive train, being responsible for the DC/AC power conversion between the battery and the electrical machine. In this context, novel converter topologies adopting modern 600/650V wide bandgap (WBG) semiconductor devices wi...

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Autors principals:	Davide Cittanti, Enrico Vico, Iustin Radu Bojoi
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2022-01-01
Col·lecció:	IEEE Access
Matèries:	Wide bandgap (WBG) devices silicon carbide (SiC) gallium nitride (GaN) high electron mobility transistors (HEMTs) figure-of-merit (FOM) hard-switching
Accés en línia:	https://ieeexplore.ieee.org/document/9773161/
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