Self-Diffusion of Ge in Amorphous GexSi1–x Films Studied In Situ by Neutron Reflectometry

Gelijkaardige items

• Self-Diffusion of Ge in Amorphous GexSi1–x Films Studied In Situ by Neutron Reflectometry
  door: Erwin Hüger, et al.
  Gepubliceerd in: (2024-07-01)
• Investigation on Ge_0.8Si_0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice
  door: Lu Xie, et al.
  Gepubliceerd in: (2021-05-01)
• Investigation of Nanostructured Thermoelectric Material Si0.8Ge0.2P0.022 for Application in Multisectional Legs of Thermoelectric Elements
  door: Yu.I. Shtern, et al.
  Gepubliceerd in: (2016-11-01)
• Strained Si_0.2Ge_0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium
  door: Lu Xie, et al.
  Gepubliceerd in: (2020-08-01)
• Enhanced Thermoelectric Performance of Polycrystalline Si_0.8Ge_0.2 Alloys through the Addition of Nanoscale Porosity
  door: S. Aria Hosseini, et al.
  Gepubliceerd in: (2021-10-01)