Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Abstract Low‐power nonvolatile memories operating down to deep cryogenic temperatures are important for a large spectrum of applications from high‐performance computing, electronics interfacing quantum computing hardware to space‐based electronics. Despite the potential of Hf0.5Zr0.5O2 (HZO), thanks...

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Hauptverfasser:	Heorhii Bohuslavskyi, Kestutis Grigoras, Mário Ribeiro, Mika Prunnila, Sayani Majumdar
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Wiley-VCH 2024-07-01
Schriftenreihe:	Advanced Electronic Materials
Schlagworte:	analog memory cryogenic memory ferroelectric hafnia ferroelectric memory capacitor in‐memory computing
Online-Zugang:	https://doi.org/10.1002/aelm.202300879
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