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Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Abstract Low‐power nonvolatile memories operating down to deep cryogenic temperatures are important for a large spectrum of applications from high‐performance computing, electronics interfacing quantum computing hardware to space‐based electronics. Despite the potential of Hf0.5Zr0.5O2 (HZO), thanks...

Whakaahuatanga katoa

I tiakina i:
Ngā kaituhi matua: Heorhii Bohuslavskyi, Kestutis Grigoras, Mário Ribeiro, Mika Prunnila, Sayani Majumdar
Hōputu: Artigo
Reo:Inglês
I whakaputaina: Wiley-VCH 2024-07-01
Rangatū:Advanced Electronic Materials
Ngā marau:
analog memory
cryogenic memory
ferroelectric hafnia
ferroelectric memory capacitor
in‐memory computing
Urunga tuihono:https://doi.org/10.1002/aelm.202300879
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