Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature
Abstract Efficient p‐ and n‐type in situ doping of compressively strained germanium tin (Ge1‐xSnx) semiconductor epilayers, grown by chemical vapor deposition on a standard Si(001) substrate, is demonstrated. Materials characterization results reveal unusual impact of dopants manifesting via a prono...
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| Autori principali: | , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Wiley-VCH
2024-09-01
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| Serie: | Advanced Electronic Materials |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1002/aelm.202300811 |
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