Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and...
Furkejuvvon:
| Váldodahkkit: | , , , , , , , |
|---|---|
| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China
2018-03-01
|
| Ráidu: | Opto-Electronic Advances |
| Fáttát: | |
| Liŋkkat: | http://www.oejournal.org/article/doi/10.29026/oea.2018.180004 |
| Fáddágilkorat: |
Eai fáddágilkorat, Lasit vuosttaš fáddágilkora!
|