An ultra‐thin switched state active frequency selective surface absorber with wide bandwidth using semi‐analytical method

Abstract Using low‐voltage forward biased PIN diodes, an ultrathin switched states active frequency selective surface based microwave absorber is designed. Using a semi‐analytical method, the NXP#BAP70‐03 PIN diode‐based single polarised unit‐cell of the active FSS absorber is rigorously analysed an...

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Detalhes bibliográficos

Principais autores:	Z. A. Pandit Jibran, Kumud R. Jha, Satish K. Sharma, Anuj Shukla
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2024-12-01
coleção:	IET Microwaves, Antennas & Propagation
Assuntos:	electromagnetic compatibility frequency selective surfaces microwave absorption
Acesso em linha:	https://doi.org/10.1049/mia2.12511
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