An ultra‐thin switched state active frequency selective surface absorber with wide bandwidth using semi‐analytical method

Abstract Using low‐voltage forward biased PIN diodes, an ultrathin switched states active frequency selective surface based microwave absorber is designed. Using a semi‐analytical method, the NXP#BAP70‐03 PIN diode‐based single polarised unit‐cell of the active FSS absorber is rigorously analysed an...

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Главные авторы:	Z. A. Pandit Jibran, Kumud R. Jha, Satish K. Sharma, Anuj Shukla
Формат:	Artigo
Язык:	Inglês
Опубликовано:	Wiley 2024-12-01
Серии:	IET Microwaves, Antennas & Propagation
Предметы:	electromagnetic compatibility frequency selective surfaces microwave absorption
Online-ссылка:	https://doi.org/10.1049/mia2.12511
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