Low-Temperature Formed Quaternary NiZrSiGe Nanocrystal Memory
This study investigated the formation of quaternary NiZrSiGe nanocrystal (NC) flash memory by using the sol-gel spin-coating method. A solution of nickel dichloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride was used as a precursor to form the sol-gel thin film. Unl...
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| Главные авторы: | , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Elsevier
2015-08-01
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| Серии: | International Journal of Electrochemical Science |
| Предметы: | |
| Online-ссылка: | http://www.sciencedirect.com/science/article/pii/S1452398123067366 |
| Метки: |
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