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Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Abstract Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficul...

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-д хадгалсан:
Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph, Collin C. D. Frink, Robert Joynt, M. A. Eriksson, Mark Friesen
Формат: Artigo
Хэл сонгох:Inglês
Хэвлэсэн: Nature Portfolio 2024-05-01
Цуврал:npj Quantum Information
Онлайн хандалт:https://doi.org/10.1038/s41534-024-00853-6
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