Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
Abstract Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficul...
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| Autors principals: | , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Portfolio
2024-05-01
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| Col·lecció: | npj Quantum Information |
| Accés en línia: | https://doi.org/10.1038/s41534-024-00853-6 |
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