Low Temperature Deposition of Boron Doped P-type Si:H Window Layers for Amorphous Silicon Solar Cells
In this paper, boron doped Si:H p-layers were prepared at a low substrate temperature of 60°C by using a PECVD technique with varied a hydrogen gas dilution ratio of 50, 100 and 150. A detailed investigation was employed on as-deposited films by using Transmission and Raman spectra measurements. The...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Elsevier
2021-06-01
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| coleção: | International Journal of Electrochemical Science |
| Assuntos: | |
| Acesso em linha: | http://www.sciencedirect.com/science/article/pii/S1452398123031449 |
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