A high-efficiency CIGS solar cell design employing BaSnO₃ as ETL and CsPbI₃ as HTL for improved stability and charge transport
ABSTRACT: The selection of the electron transport layer (ETL) and hole transport layer (HTL) has a significant impact on the performance of CIGS (Copper Indium Gallium Selenide) solar cells. In this work, we use SCAPS-1D simulation to examine how different ETL and HTL materials affect the stability...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Elsevier
2025-12-01
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| coleção: | Results in Engineering |
| Assuntos: | |
| Acesso em linha: | http://www.sciencedirect.com/science/article/pii/S2590123025043671 |
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