A high-efficiency CIGS solar cell design employing BaSnO₃ as ETL and CsPbI₃ as HTL for improved stability and charge transport

ABSTRACT: The selection of the electron transport layer (ETL) and hole transport layer (HTL) has a significant impact on the performance of CIGS (Copper Indium Gallium Selenide) solar cells. In this work, we use SCAPS-1D simulation to examine how different ETL and HTL materials affect the stability...

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Hlavní autoři:	T.R.S. Chandran, Deepak Kumar Panda
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Elsevier 2025-12-01
Edice:	Results in Engineering
Témata:	CIGS Efficiency ETL HTL Solar cell
On-line přístup:	http://www.sciencedirect.com/science/article/pii/S2590123025043671
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