GaAs Growth on Ge‐Buffered Discontinuous (111)‐Faceted V‐Groove Silicon Substrates

Abstract The propagation of antiphase boundaries (APBs) and threading dislocations (TDs) poses a significant impediment to the realisation of high‐quality group III–V semiconductors grown on group IV platforms. The complete annihilation of APBs and a substantial reduction in threading dislocation de...

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Bibliografiske detaljer

Principais autores:	Makhayeni Mtunzi, Hui Jia, Mateus G. Masteghin, Yaonan Hou, Haotian Zeng, Huiwen Deng, Jae‐Seong Park, Chong Chen, Jun Li, Xingzhao Yan, Ilias Skandalos, Frederic Gardes, Mingchu Tang, Alwyn Seeds, Huiyun Liu
Format:	Artigo
Sprog:	Inglês
Udgivet:	Wiley-VCH 2025-09-01
Serier:	Advanced Physics Research
Fag:	antiphase boundaries aspect ratio trapping threading dislocations v‐groove
Online adgang:	https://doi.org/10.1002/apxr.202500026
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