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GaAs Growth on Ge‐Buffered Discontinuous (111)‐Faceted V‐Groove Silicon Substrates

Abstract The propagation of antiphase boundaries (APBs) and threading dislocations (TDs) poses a significant impediment to the realisation of high‐quality group III–V semiconductors grown on group IV platforms. The complete annihilation of APBs and a substantial reduction in threading dislocation de...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Makhayeni Mtunzi, Hui Jia, Mateus G. Masteghin, Yaonan Hou, Haotian Zeng, Huiwen Deng, Jae‐Seong Park, Chong Chen, Jun Li, Xingzhao Yan, Ilias Skandalos, Frederic Gardes, Mingchu Tang, Alwyn Seeds, Huiyun Liu
Format: Artigo
Sprache:Inglês
Veröffentlicht: Wiley-VCH 2025-09-01
Schriftenreihe:Advanced Physics Research
Schlagworte:
antiphase boundaries
aspect ratio trapping
threading dislocations
v‐groove
Online-Zugang:https://doi.org/10.1002/apxr.202500026
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