Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing
III–V semiconductor‐based photodiodes with graphene incorporated have been studied in recent years due to the attractive optoelectronic properties of graphene, including optical transparency and enhanced photoresponsivity. The photoresponsivity can be further improved by converting the semiconductor...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley-VCH
2021-03-01
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| Col·lecció: | Advanced Photonics Research |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/adpr.202000134 |
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