Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.

Bibliografiske detaljer

Principais autores:	Naho Tsunetomo, Shohei Iguchi, Małgorzata Wierzbowska, Akiko Ueda, Yousang Won, Sinae Heo, Yesul Jeong, Yutaka Wakayama, Kazuhiro Marumoto
Format:	Artigo
Sprog:	Inglês
Udgivet:	Nature Portfolio 2021-03-01
Serier:	Communications Materials
Online adgang:	https://doi.org/10.1038/s43246-021-00129-y
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