The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors
We report the improvement of the electrical performance of field effect transistors (FETs) fabricated on monolayer chemical vapor deposited (CVD) MoS2, by applying an interacting fluoropolymer capping layer (Teflon-AF). The electrical characterizations of more than 60 FETs, after applying Teflon-AF...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
MDPI AG
2016-08-01
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| Σειρά: | Applied Sciences |
| Θέματα: | |
| Διαθέσιμο Online: | http://www.mdpi.com/2076-3417/6/9/236 |
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