Gas-Sensitive Properties of β-Ga<sub>2</sub>O<sub>3</sub> Thin Films Deposited and Annealed at High Temperature
The gas-sensitive properties of thin films of β-Ga<sub>2</sub>O<sub>3</sub> deposited via RF magnetron sputtering while heating the substrate to 650 °C were studied. Some of the samples were subjected to additional high-temperature annealing at a temperature of 900 °C. As a result, for samples subje...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2023-11-01
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| Col·lecció: | Engineering Proceedings |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2673-4591/58/1/2 |
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