Ferroelectric 2D SnS2 Analog Synaptic FET
Abstract In this study, the development and characterization of 2D ferroelectric field‐effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D semiconductors. The fabricated device demonstrated multi‐level data storage capabilities. It successfully e...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Wiley
2024-04-01
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| Series: | Advanced Science |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.1002/advs.202308588 |
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