Ferroelectric 2D SnS2 Analog Synaptic FET

Abstract In this study, the development and characterization of 2D ferroelectric field‐effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D semiconductors. The fabricated device demonstrated multi‐level data storage capabilities. It successfully e...

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Bibliografski detalji

Glavni autori:	Chong‐Myeong Song, Dongha Kim, Shinbuhm Lee, Hyuk‐Jun Kwon
Format:	Artigo
Jezik:	Inglês
Izdano:	Wiley 2024-04-01
Serija:	Advanced Science
Teme:	ferroelectrics field‐effect transistor synaptic device tin disulfide (SnS2)
Online pristup:	https://doi.org/10.1002/advs.202308588
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