High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al<sub>0.95</sub>Ga<sub>0.0</sub><sub>5</sub>Sb barrier, which eliminates the junction leaka...
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| Principais autores: | , , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2021-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9264257/ |
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