MOCVD Growth of GaSb and Al GaSb
Abstract. GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high speed and low noise in APD. In this paper we repor...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
ITB Journal Publisher
2019-01-01
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| coleção: | Journal of Mathematical and Fundamental Sciences |
| Assuntos: | |
| Acesso em linha: | https://journals.itb.ac.id/index.php/jmfs/article/view/9235 |
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