Wafer‐Scale Fabrication of Edge‐Contacted Nanosheet Transistors via Alloying‐Mediated Phase Engineering
Edge contacts offer significant potential for scaling down 2D transistors due to their minimal contact resistance and reduced contact length. However, their intricate fabrication complicates reproducible large‐scale production and evaluation of electrical properties, particularly for p‐type channels...
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| Asıl Yazarlar: | , , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley-VCH
2025-12-01
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| Seri Bilgileri: | Small Science |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/smsc.202500320 |
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