Wafer‐Scale Fabrication of Edge‐Contacted Nanosheet Transistors via Alloying‐Mediated Phase Engineering

Edge contacts offer significant potential for scaling down 2D transistors due to their minimal contact resistance and reduced contact length. However, their intricate fabrication complicates reproducible large‐scale production and evaluation of electrical properties, particularly for p‐type channels...

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Detalhes bibliográficos

Principais autores:	Sora Jang, Seunguk Song, Juwon Han, Aram Yoon, Jaewon Wang, Hyeonwoo Lee, Young Ho Jin, Yeoseon Sim, Zonghoon Lee, Changwook Jeong, Soon‐Yong Kwon
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2025-12-01
coleção:	Small Science
Assuntos:	contact length scaling contact resistance edge contact selective‐area growth semimetal electrode transition metal dichalcogenide
Acesso em linha:	https://doi.org/10.1002/smsc.202500320
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