GeSe ovonic threshold switch: the impact of functional layer thickness and device size
Abstract Three-dimensional phase change memory (3D PCM), possessing fast-speed, high-density and nonvolatility, has been successfully commercialized as storage class memory. A complete PCM device is composed of a memory cell and an associated ovonic threshold switch (OTS) device, which effectively r...
I tiakina i:
| Ngā kaituhi matua: | , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Nature Portfolio
2024-03-01
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| Rangatū: | Scientific Reports |
| Ngā marau: | |
| Urunga tuihono: | https://doi.org/10.1038/s41598-024-57029-7 |
| Ngā Tūtohu: |
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