GeSe ovonic threshold switch: the impact of functional layer thickness and device size
Abstract Three-dimensional phase change memory (3D PCM), possessing fast-speed, high-density and nonvolatility, has been successfully commercialized as storage class memory. A complete PCM device is composed of a memory cell and an associated ovonic threshold switch (OTS) device, which effectively r...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Portfolio
2024-03-01
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| Col·lecció: | Scientific Reports |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1038/s41598-024-57029-7 |
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