Design of High Peak Power Pulsed Laser Diode Driver
This paper attempts to describe a laser diode driver circuit using the depletion mode gallium nitride high electron mobility transistor (D-mode GaN HEMT) to generate nanosecond pulses at a repetition rate up to 10 MHz from the vertical-cavity surface-emitting laser (VCSEL). The feature of this drive...
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| Autori principali: | , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2022-09-01
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| Serie: | Photonics |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2304-6732/9/9/652 |
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