Reliability Express Control of the Gate Dielectric of Semiconductor Devices
The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume of factors determining its electrophysical properties increases. The purpose of this paper is development of the control express method of t...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Belarusian National Technical University
2018-12-01
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| Col·lecció: | Приборы и методы измерений |
| Matèries: | |
| Accés en línia: | https://pimi.bntu.by/jour/article/view/404 |
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