Rapid thermal treatment robotics unit for creation of electronic equipment devices

The design specific features of the rapid thermal treatment automated unit for silicon wafers with the diameter of 100 mm are described. For preheating the unit uses the halogen lamps with a tungsten spiral of KGT 220-2000-3 in the quantity of 12 pieces, which ensure the wafer heating up to 1200 ºC...

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Podrobná bibliografie

Hlavní autoři:	V. A. Saladukha, V. A. Pilipenko, V. P. Yakovlev
Médium:	Artigo
Jazyk:	Russo
Vydáno:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Edice:	Доклады Белорусского государственного университета информатики и радиоэлектроники
Témata:	annealing chamber pulse duration silicon wafer heating uniformity
On-line přístup:	https://doklady.bsuir.by/jour/article/view/1099
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