Integrated 2D multi-fin field-effect transistors
Abstract Vertical semiconducting fins integrated with high-κ oxide dielectrics have been at the centre of the key device architecture that has promoted advanced transistor scaling during the last decades. Single-fin channels based on two-dimensional (2D) semiconductors are expected to offer unique a...
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| Автори: | , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Nature Portfolio
2024-04-01
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| Серія: | Nature Communications |
| Онлайн доступ: | https://doi.org/10.1038/s41467-024-47974-2 |
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