Quantum transport through a constriction in nanosheet gate-all-around transistors

Abstract In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for quantum mechanical effects arising from t...

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Hlavní autoři:	Kyoung Yeon Kim, Hong-Hyun Park, Seonghoon Jin, Uihui Kwon, Woosung Choi, Dae Sin Kim
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Nature Portfolio 2025-05-01
Edice:	Communications Engineering
On-line přístup:	https://doi.org/10.1038/s44172-025-00435-0
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