Quantum transport through a constriction in nanosheet gate-all-around transistors
Abstract In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for quantum mechanical effects arising from t...
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| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Nature Portfolio
2025-05-01
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| Цуврал: | Communications Engineering |
| Онлайн хандалт: | https://doi.org/10.1038/s44172-025-00435-0 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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