QR kód

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue

Abstract As a promising candidate for nonvolatile memory devices, the hafnia‐based ferroelectric system has recently been a hot research topic. Although significant progress has been made over the past decade, the endurance problem is still an obstacle to its final application. In perovskite‐based f...

Celý popis

Uloženo v:
Podrobná bibliografie
Hlavní autoři: Zimeng Zhang, Isaac Craig, Tao Zhou, Martin Holt, Raul Flores, Evan Sheridan, Katherine Inzani, Xiaoxi Huang, Joyeeta Nag, Bhagwati Prasad, Sinéad M. Griffin, Ramamoorthy Ramesh
Médium: Artigo
Jazyk:Inglês
Vydáno: Wiley-VCH 2024-09-01
Edice:Advanced Electronic Materials
Témata:
On-line přístup:https://doi.org/10.1002/aelm.202300877
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!