Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue
Abstract As a promising candidate for nonvolatile memory devices, the hafnia‐based ferroelectric system has recently been a hot research topic. Although significant progress has been made over the past decade, the endurance problem is still an obstacle to its final application. In perovskite‐based f...
Uloženo v:
| Hlavní autoři: | , , , , , , , , , , , |
|---|---|
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Wiley-VCH
2024-09-01
|
| Edice: | Advanced Electronic Materials |
| Témata: | |
| On-line přístup: | https://doi.org/10.1002/aelm.202300877 |
| Tagy: |
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|
