Study on phase characteristics of heterostructure por-Ga2O3/GaAs
The synthesis and characterization of heterostructure por-Ga2O3/GaAs represent a crucial advancement in nanomaterials, particularly in optoelectronic applications. Employing a two-stage electrochemical etching methodology, this research has elucidated the precise conditions required to fabricate su...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry of NAS of Ukraine
2024-05-01
|
| Schriftenreihe: | Хімія, фізика та технологія поверхні |
| Schlagworte: | |
| Online-Zugang: | https://cpts.com.ua/index.php/cpts/article/view/722 |
| Tags: |
Keine Tags, Fügen Sie das erste Tag hinzu!
|