Maximal Rashba Splitting in GeTe/Bi2Te3 Heterostructures via Strong Band Bending

Abstract The Rashba effect has emerged as a pivotal phenomenon driving novel discoveries in condensed matter physics. Materials with large Rashba energy ER, wavenumber offset k0 and Rashba parameter αR are prerequisites for spintronic devices operating above room temperature. While neither ultrathin...

Descrizione completa

Dettagli Bibliografici

Autori principali:	Qing‐Lin Yang, Xu Yang, Jia‐Wan Li, Yan Li, Jin Tang, Hai‐Feng Du, Zi‐Zhao Gong, Hao‐Pu Xue, Jia‐Nan Liu, Zhuo Deng, Peng‐Tao Yang, Xiang‐Qun Zhang, Wei He, Yusheng Hou, Zhao‐Hua Cheng
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley 2026-01-01
Serie:	Advanced Science
Soggetti:	band bending band structure ferroelectric Rashba semiconductors heterostructure Rashba effect
Accesso online:	https://doi.org/10.1002/advs.202513673
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!