Dynamics at crystal/melt interface during solidification of multicrystalline silicon
A fundamental understanding of crystal growth dynamics during directional solidification of multicrystalline Si (mc-Si) is crucial for the development of crystal growth technology for mc-Si ingots for use in solar cells. In situ observation of the crystal/melt interface is a way to obtain direct evi...
Tallennettuna:
| Päätekijät: | , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
De Gruyter
2022-02-01
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| Sarja: | High Temperature Materials and Processes |
| Aiheet: | |
| Linkit: | https://doi.org/10.1515/htmp-2022-0020 |
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