Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers
Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructi...
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| Glavni autori: | , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
EDP Sciences
2023-01-01
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| Serija: | Journal of the European Optical Society-Rapid Publications |
| Teme: | |
| Online pristup: | https://jeos.edpsciences.org/articles/jeos/full_html/2023/01/jeos20230010/jeos20230010.html |
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