High-quality 4H–SiC epitaxial layers grown on 200-mm substrates
A high-quality n-type 4H–SiC epitaxial layer was grown on a 200-mm, 4° off-axis 4H–SiC substrate using a horizontal hot-wall single-wafer chemical-vapor deposition reactor. The uniformity and defects of the epitaxial wafer were characterized using Fourier-transform infrared spectroscopy, the mercury...
में बचाया:
| मुख्य लेखकों: | , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
AIP Publishing LLC
2026-06-01
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| श्रृंखला: | Nanotechnology and Precision Engineering |
| ऑनलाइन पहुंच: | https://pubs.aip.org/tu/npe/article-pdf/doi/10.1063/5.0304541/21039779/043001_1_5.0304541.pdf |
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