Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update

This paper presents a comprehensive overview of nonlinear thermal effects in bipolar transistors under static conditions. The influence of these effects on the thermal resistance is theoretically explained and analytically modeled using the single-semiconductor assumption. A detailed review of exper...

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Autors principals:	Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, Lorenzo Codecasa
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2022-07-01
Col·lecció:	Energies
Matèries:	compact transistor model finite-element method (FEM) gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) nonlinear thermal effects silicon-germanium (SiGe)
Accés en línia:	https://www.mdpi.com/1996-1073/15/15/5457
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