Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing β-Ga₂O₃ Layers

The development of growth processes for the synthesis of high-quality epitaxial layers is one of the requirements for utilizing the ultrawide band gap semiconductor Ga₂O₃ for high-voltage, high-power electronics. A halide vapor phase epitaxy (HVPE) process used to grow β-Ga<sub...

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Principais autores:	Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Carl Hemmingsson
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2022-12-01
coleção:	Crystals
Assuntos:	computer simulation growth models halide vapor phase epitaxy β-Ga<sub>2</sub>O<sub>3</sub> ultrawide bandgap semiconductors
Acesso em linha:	https://www.mdpi.com/2073-4352/12/12/1790
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