Effect of Source Field Plate Cracks on the Electrical Performance of AlGaN/GaN HEMT Devices

In the current study, the effects of cracks in source field plates (SFPs) on the electrical performance of AlGaN/GaN high electron mobility transistors (HEMTs) are investigated systematically using numerical simulation. In detail, the influence of crack width and junction angle in SFPs on device per...

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Bibliografische gegevens

Hoofdauteurs:	Ye-Nan Bie, Cheng-Lin Du, Xiao-Long Cai, Ran Ye, Hai-Jun Liu, Yu Zhang, Xiang-Yang Duan, Jie-Jie Zhu
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	MDPI AG 2022-08-01
Reeks:	Crystals
Onderwerpen:	AlGaN/GaN HEMTs source field plate cracks GaN TCAD modeling electrical performance
Online toegang:	https://www.mdpi.com/2073-4352/12/9/1195
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