Magnetoresistance ratio in magnetic tunnel junction with silicon diffused MgO barrier

We demonstrated a magnetic tunnel junction (MTJ) consisting of Fe/MgO-Si-MgO/Fe. Si layer was deposited at room temperature and at 700 °C; when deposited at 700 °C, Si diffused into the MgO layer. The MTJ with silicon deposited at 700 °C attained high MR ratios of up to 38.7 and 2.9% at t _Si = 0.19...

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Egile Nagusiak:	Tatsuki Watanabe, Minori Goto, Yuichiro Ando, Tsubasa Watakabe, Hikaru Nomura, Yoshishige Suzuki
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	IOP Publishing 2023-01-01
Saila:	Applied Physics Express
Gaiak:	spintronics spin MOSFET silicon vertical spin valve magnetic tunnel junction magnetoresistance ratio
Sarrera elektronikoa:	https://doi.org/10.35848/1882-0786/ad0ba1
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