Magnetoresistance ratio in magnetic tunnel junction with silicon diffused MgO barrier
We demonstrated a magnetic tunnel junction (MTJ) consisting of Fe/MgO-Si-MgO/Fe. Si layer was deposited at room temperature and at 700 °C; when deposited at 700 °C, Si diffused into the MgO layer. The MTJ with silicon deposited at 700 °C attained high MR ratios of up to 38.7 and 2.9% at t _Si = 0.19...
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| Автори: | , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
IOP Publishing
2023-01-01
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| Серія: | Applied Physics Express |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.35848/1882-0786/ad0ba1 |
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