Electron transport in quasi-ballistic FETs subjected to a magnetic field
We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents, and voltages in the short FET channels are determined. The basic properties of current–voltage characteristics of quasi-ba...
שמור ב:
| Principais autores: | , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
AIP Publishing LLC
2024-11-01
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| סדרה: | AIP Advances |
| גישה מקוונת: | http://dx.doi.org/10.1063/5.0243812 |
| תגים: |
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