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Electron transport in quasi-ballistic FETs subjected to a magnetic field

We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents, and voltages in the short FET channels are determined. The basic properties of current–voltage characteristics of quasi-ba...

Ausführliche Beschreibung

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Bibliografische Detailangaben
Hauptverfasser: M. Yelisieiev, V. A. Kochelap
Format: Artigo
Sprache:Inglês
Veröffentlicht: AIP Publishing LLC 2024-11-01
Schriftenreihe:AIP Advances
Online-Zugang:http://dx.doi.org/10.1063/5.0243812
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