A 40 GHz High-Image-Rejection LNA with a Switchable Transformer-Based Notch Filter in 65 nm CMOS
This article presents a low-noise amplifier (LNA) with high image rejection ratio (IRR) operating in the 5G millimeter-wave band using a 65 nm CMOS process. The circuit adopts an inter-stage notch filtering structure composed of a transformer and a switched capacitor array to achieve image suppressi...
Enregistré dans:
| Auteurs principaux: | , |
|---|---|
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2025-05-01
|
| Collection: | Micromachines |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2072-666X/16/6/676 |
| Tags: |
Pas de tags, Soyez le premier à ajouter un tag!
|