Annealing Induced Saturation in Electron Concentration for V-Doped CdO
As-grown Ar-deposited Cd<sub>1−x</sub>V<sub>x</sub>O and Ar/O<sub>2</sub>-deposited Cd<sub>1−y</sub>V<sub>y</sub>O feature lower and higher electron concentrations than 4 × 10<sup>20</sup> cm<sup>−3</sup>, respectively. After isothermal and isochronal annealing under N<sub>2</sub> ambient, we find t...
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| Glavni autori: | , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2021-09-01
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| Serija: | Crystals |
| Teme: | |
| Online pristup: | https://www.mdpi.com/2073-4352/11/9/1079 |
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